DocumentCode
1792531
Title
Low temperature bonding for 3D
Author
Suga, Takashi
Author_Institution
Sch. of Eng., Univ. of Tokyo, Tokyo, Japan
fYear
2014
fDate
15-16 July 2014
Firstpage
1
Lastpage
1
Abstract
Chemical interactions exist always between atoms on mated solids as the nature of solid surface. These interactions are origin of the adhesion energy between solids. It means that any solid materials should be bonded even if there is neither high temperature reaction nor diffusion process. This is the idea on which the surface activated bonding (SAB) at room temperature is based. Recent development of the SAB combining several processes of the surface activation provides a bridge to the conventional wafer bonding technique for bonding in ambient atmosphere.
Keywords
adhesion; surface treatment; three-dimensional integrated circuits; wafer bonding; 3D integrated circuits; adhesion energy; low temperature bonding; surface activated bonding; wafer bonding technique; Bonding; Metals; Silicon; Solids; Surface treatment; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on
Conference_Location
Tokyo
Print_ISBN
978-1-4799-5260-1
Type
conf
DOI
10.1109/LTB-3D.2014.6886141
Filename
6886141
Link To Document