• DocumentCode
    1792531
  • Title

    Low temperature bonding for 3D

  • Author

    Suga, Takashi

  • Author_Institution
    Sch. of Eng., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2014
  • fDate
    15-16 July 2014
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Chemical interactions exist always between atoms on mated solids as the nature of solid surface. These interactions are origin of the adhesion energy between solids. It means that any solid materials should be bonded even if there is neither high temperature reaction nor diffusion process. This is the idea on which the surface activated bonding (SAB) at room temperature is based. Recent development of the SAB combining several processes of the surface activation provides a bridge to the conventional wafer bonding technique for bonding in ambient atmosphere.
  • Keywords
    adhesion; surface treatment; three-dimensional integrated circuits; wafer bonding; 3D integrated circuits; adhesion energy; low temperature bonding; surface activated bonding; wafer bonding technique; Bonding; Metals; Silicon; Solids; Surface treatment; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on
  • Conference_Location
    Tokyo
  • Print_ISBN
    978-1-4799-5260-1
  • Type

    conf

  • DOI
    10.1109/LTB-3D.2014.6886141
  • Filename
    6886141