• DocumentCode
    1792532
  • Title

    Three dimensional dynamic random access memory

  • Author

    Kirihata, Toshiaki

  • Author_Institution
    IBM Syst. & Technol. Group, Hopewell Junction, NY, USA
  • fYear
    2014
  • fDate
    15-16 July 2014
  • Firstpage
    2
  • Lastpage
    2
  • Abstract
    We review high-density embedded 3D DRAM cache, industry 3D stacked DDR3 and wide IO mobile DRAM along with more recent Hybrid-Memory Cube (HMC) and High-Bandwidth Memory (HBM).
  • Keywords
    DRAM chips; cache storage; three-dimensional integrated circuits; high-bandwidth memory; high-density embedded 3D DRAM cache; hybrid-memory cube; industry 3D stacked DDR3; three dimensional dynamic random access memory; wide IO mobile DRAM; Cache memory; Industries; Junctions; Random access memory; Research and development; Stacking; Three-dimensional displays;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on
  • Conference_Location
    Tokyo
  • Print_ISBN
    978-1-4799-5260-1
  • Type

    conf

  • DOI
    10.1109/LTB-3D.2014.6886142
  • Filename
    6886142