DocumentCode
1792532
Title
Three dimensional dynamic random access memory
Author
Kirihata, Toshiaki
Author_Institution
IBM Syst. & Technol. Group, Hopewell Junction, NY, USA
fYear
2014
fDate
15-16 July 2014
Firstpage
2
Lastpage
2
Abstract
We review high-density embedded 3D DRAM cache, industry 3D stacked DDR3 and wide IO mobile DRAM along with more recent Hybrid-Memory Cube (HMC) and High-Bandwidth Memory (HBM).
Keywords
DRAM chips; cache storage; three-dimensional integrated circuits; high-bandwidth memory; high-density embedded 3D DRAM cache; hybrid-memory cube; industry 3D stacked DDR3; three dimensional dynamic random access memory; wide IO mobile DRAM; Cache memory; Industries; Junctions; Random access memory; Research and development; Stacking; Three-dimensional displays;
fLanguage
English
Publisher
ieee
Conference_Titel
Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on
Conference_Location
Tokyo
Print_ISBN
978-1-4799-5260-1
Type
conf
DOI
10.1109/LTB-3D.2014.6886142
Filename
6886142
Link To Document