Title :
Cu/dielectric hybrid bonding using surface-activated bonding (SAB) technologies for 3D integration
Author :
Ran He ; Yamauchi, Akira ; Suga, Takashi
Author_Institution :
Sch. of Eng., Univ. of Tokyo, Tokyo, Japan
Abstract :
Surface activation is of great importance for low temperature wafer bonding technology development. We developed new low temperature Cu/dielectric hybrid bonding process by using surface-activated bonding technologies for 3D integration application. We report the surface analysis results of the hybrid surface treated by Ar plasma and Ar FAB, and discuss the effects of different surface activation processes on wafer bonding, and conclude with prospects for the future.
Keywords :
copper; cryogenic electronics; metal-insulator boundaries; plasma materials processing; surface treatment; three-dimensional integrated circuits; wafer bonding; 3D integration application; Cu; argon fast atom bombardment; argon plasma; copper-dielectric hybrid bonding; low temperature wafer bonding technology; surface analysis; surface-activated bonding; Bonding; Dielectrics; Plasma temperature; Surface contamination; Surface treatment;
Conference_Titel :
Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4799-5260-1
DOI :
10.1109/LTB-3D.2014.6886151
