Cu/dielectric hybrid bonding using surface-activated bonding (SAB) technologies for 3D integration

Author

Ran He ; Yamauchi, Akira ; Suga, Takashi

Author_Institution

Sch. of Eng., Univ. of Tokyo, Tokyo, Japan

fYear

2014

fDate

15-16 July 2014

Firstpage

12

Lastpage

12

Abstract

Surface activation is of great importance for low temperature wafer bonding technology development. We developed new low temperature Cu/dielectric hybrid bonding process by using surface-activated bonding technologies for 3D integration application. We report the surface analysis results of the hybrid surface treated by Ar plasma and Ar FAB, and discuss the effects of different surface activation processes on wafer bonding, and conclude with prospects for the future.

Keywords

copper; cryogenic electronics; metal-insulator boundaries; plasma materials processing; surface treatment; three-dimensional integrated circuits; wafer bonding; 3D integration application; Cu; argon fast atom bombardment; argon plasma; copper-dielectric hybrid bonding; low temperature wafer bonding technology; surface analysis; surface-activated bonding; Bonding; Dielectrics; Plasma temperature; Surface contamination; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on

Conference_Location

Tokyo

Print_ISBN

978-1-4799-5260-1

Type

conf

DOI

10.1109/LTB-3D.2014.6886151

Filename

6886151