Title :
Via-last/backside-via 3D integration using a visible-light laser debonding technique
Author :
Fukushima, Tetsuya ; Mariappan, Muralindran ; Bea, J.-C. ; Hashimoto, Hiroya ; Sato, Yuuki ; Motoyoshi, Mizuki ; Lee, Ki-Won ; Koyanagi, Mitsumasa
Author_Institution :
New Ind. Creation Hatchery Center (NICHe), Tohoku Univ., Sendai, Japan
Abstract :
A visible-light laser debonding technique is introduced for via-last/backside-via 3D integration. Temporary bonding of 12-inch wafers with a temporary glue and the subsequent wafer thinning processes give small TTV within 1 μm by using an auto-TTV functions. Cu-TSV daisy chains with TSV diameters of 5 μm are formed in 50-μm-thick thinned Si wafers.
Keywords :
copper; elemental semiconductors; integrated circuit interconnections; laser materials processing; silicon; three-dimensional integrated circuits; vias; wafer bonding; Cu; Cu-TSV daisy chains; Si; TSV diameters; size 12 inch; size 5 mum; size 50 mum; via-last/backside-via 3D integration; visible-light laser debonding technique; wafer thinning processes; Bonding; Glass; Lasers; Silicon; Three-dimensional displays; Through-silicon vias; Wiring;
Conference_Titel :
Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4799-5260-1
DOI :
10.1109/LTB-3D.2014.6886152
