Title :
Investigation of high temperature process for III-V/SOI hybrid photonic devices with AlInAs oxidation current confinement layer
Author :
Hayashi, Yasuhiro ; Suzuki, Jun ; Kuno, Yoshinori ; Kang, Jiawen ; Amemiya, Tomohiro ; Nishiyama, Naoto ; Arai, Shigehisa
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
In order to realize AlInAs oxidation current confinement structures for III-V/SOI hybrid photonic devices, oxidation condition was investigated. With 4-hours ramp up time and 4-hours ramp down time, 63% of PL intensity was maintained even after the oxidation process at 530°C.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; high-temperature electronics; indium compounds; integrated circuit bonding; integrated optics; oxidation; photoluminescence; quantum well devices; semiconductor quantum wells; three-dimensional integrated circuits; AlInAs; AlInAs oxidation current confinement layer; GaInAsP; III-V/SOI hybrid photonic devices; high temperature process; photoluminescence intensity; quantum wells; temperature 530 degC; time 4 hour; Bonding; Indium phosphide; Oxidation; Photonics; Plasma temperature; Silicon; Thermal stresses;
Conference_Titel :
Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4799-5260-1
DOI :
10.1109/LTB-3D.2014.6886156
