DocumentCode
1792566
Title
Light propagation properties of Si waveguides after removing III–V layer on a III–V/SOI wafer fabricated by plasma activated bonding
Author
Suzuki, Jun ; Hayashi, Yasuhiro ; Kuno, Yoshinori ; JoonHyun Kang ; Amemiya, Tomohiro ; Nishiyama, Naoto ; Arai, Shigehisa
Author_Institution
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
fYear
2014
fDate
15-16 July 2014
Firstpage
20
Lastpage
20
Abstract
Qualities of Si waveguides after III-V/Si direct bonding process was evaluated, and propagation loss of 4.0 dB/cm was achieved, which is equivalent to the value of waveguides not including direct bonding process.
Keywords
elemental semiconductors; integrated optics; light propagation; optical waveguides; silicon; silicon-on-insulator; sputter etching; three-dimensional integrated circuits; wafer bonding; III-V/Si direct bonding process; Si; etching methods; light propagation properties; plasma activated bonding; propagation loss; silicon waveguides; Biomedical optical imaging; Optical device fabrication; Optical losses; Optical waveguides; Propagation losses; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on
Conference_Location
Tokyo
Print_ISBN
978-1-4799-5260-1
Type
conf
DOI
10.1109/LTB-3D.2014.6886159
Filename
6886159
Link To Document