Title :
Room temperature direct bonding of Si wafers smoothed by Ne beam irradiation
Author :
Kurashima, Yuichi ; Maeda, Atsushi ; Takagi, Hiroyuki
Author_Institution :
Res. Center for Ubiquitous MEMS & Micro Eng. (UMEMSME), Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
Abstract :
We found the improvement of the bonding strength by surface smoothing effect of Ne fast-atom-beam (FAB). Surface roughness of a Si wafer decreased from 0.40 to 0.17 nm rms by applying the Ne FAB etching of 30 nm depth. The bonding strength was largely improved by Ne FAB surface smoothing and finally became equivalent to Si bulk strength.
Keywords :
elemental semiconductors; etching; laser beam effects; silicon; surface roughness; three-dimensional integrated circuits; wafer bonding; Ne; Ne FAB etching; Ne fast-atom-beam irradiation; Si; bonding strength; room temperature direct bonding; silicon bulk strength; silicon wafers; surface roughness; surface smoothing effect; temperature 293 K to 298 K; Bonding; Etching; Rough surfaces; Silicon; Surface roughness; Xenon;
Conference_Titel :
Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4799-5260-1
DOI :
10.1109/LTB-3D.2014.6886163
