Micromechanical view of heterointegration by wafer bonding and layer splitting

Author

Baumgart, Helmut ; Mamun, M.A. ; Elmustafa, A.A.

Author_Institution

Dept. of Electr. & Comput. Eng., Old Dominion Univ., Norfolk, VA, USA

fYear

2014

fDate

15-16 July 2014

Firstpage

30

Lastpage

30

Abstract

An overview of the micromechanical issues of heterointegration by wafer bonding and layer exfoliation is presented for the systems of AlN on sapphire and epitaxial Si_1-xGe_x and Ge-free bi-axially strained sSOI. AlN layers grown epitaxially on sapphire were implanted with hydrogen ions at 50 keV with various fluences ranging from 0.5 × 10¹⁷cm^-2 to 3 × 10¹⁷cm^-2 in order to optimize the experimental conditions for bonding and AlN thin layer transfer using the ion-cut process.

Keywords

Ge-Si alloys; III-V semiconductors; aluminium compounds; elastic moduli; hydrogen; ion implantation; microhardness; nanoindentation; semiconductor epitaxial layers; silicon-on-insulator; three-dimensional integrated circuits; wafer bonding; wide band gap semiconductors; Al₂O₃; AlN:H; Si_1-xGe_x; elastic modulus; electron volt energy 50 keV; hardness; heterointegration; hydrogen ions; ion-cut process; layer exfoliation; layer splitting; micromechanical properties; nanoindentation measurements; sapphire; thin layer transfer; wafer bonding; Annealing; Films; Hydrogen; III-V semiconductor materials; Lattices; Silicon; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on

Conference_Location

Tokyo

Print_ISBN

978-1-4799-5260-1

Type

conf

DOI

10.1109/LTB-3D.2014.6886169

Filename

6886169