Title :
Micromechanical view of heterointegration by wafer bonding and layer splitting
Author :
Baumgart, Helmut ; Mamun, M.A. ; Elmustafa, A.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Old Dominion Univ., Norfolk, VA, USA
Abstract :
An overview of the micromechanical issues of heterointegration by wafer bonding and layer exfoliation is presented for the systems of AlN on sapphire and epitaxial Si1-xGex and Ge-free bi-axially strained sSOI. AlN layers grown epitaxially on sapphire were implanted with hydrogen ions at 50 keV with various fluences ranging from 0.5 × 1017cm-2 to 3 × 1017cm-2 in order to optimize the experimental conditions for bonding and AlN thin layer transfer using the ion-cut process.
Keywords :
Ge-Si alloys; III-V semiconductors; aluminium compounds; elastic moduli; hydrogen; ion implantation; microhardness; nanoindentation; semiconductor epitaxial layers; silicon-on-insulator; three-dimensional integrated circuits; wafer bonding; wide band gap semiconductors; Al2O3; AlN:H; Si1-xGex; elastic modulus; electron volt energy 50 keV; hardness; heterointegration; hydrogen ions; ion-cut process; layer exfoliation; layer splitting; micromechanical properties; nanoindentation measurements; sapphire; thin layer transfer; wafer bonding; Annealing; Films; Hydrogen; III-V semiconductor materials; Lattices; Silicon; Wafer bonding;
Conference_Titel :
Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4799-5260-1
DOI :
10.1109/LTB-3D.2014.6886169
