Low-temperature bonding technologies for MEMS and 3D-IC

Author

Taklo, Maaike M. V. ; Schjolberg-Henriksen, K. ; Malik, Nikhil ; Tofteberg, H.R. ; Poppe, E. ; Vella, D.O. ; Borg, Johan ; Attard, A. ; Hajdarevic, Z. ; Klumpp, A. ; Ramm, P.

Author_Institution

SINTEF, Oslo, Norway

fYear

2014

fDate

15-16 July 2014

Firstpage

34

Lastpage

34

Abstract

Recent developments within MEMS and IC call for a reduction in bonding temperature down to 350 °C and below. For MEMS, sensitive mechanical structures, thinned wafers, and heterogeneous integration of temperature-sensitive materials or materials with dissimilar temperature responses are main driving forces. For 3D-ICs, transistors´ sensitivity to stress, and stress-induced failures in fragile dielectric layers are important motivations. The ongoing research on low-temperature bonding in the fields of MEMS and 3D-IC integration are partly overlapping. Therefore, extended knowledge exchange can be of mutual benefit, and will be attempted in this invited talk.

Keywords

cryogenic electronics; lead bonding; micromechanical devices; stress effects; three-dimensional integrated circuits; wafer bonding; 3D-IC; MEMS; fragile dielectric layers; heterogeneous integration; low-temperature bonding technologies; sensitive mechanical structures; stress-induced failures; temperature-sensitive materials; thinned wafers; transistor stress sensitivity; Bonding; Materials; Micromechanical devices; Plasma temperature; Stress; Temperature sensors; Ultrasonic imaging;

fLanguage

English

Publisher

ieee

Conference_Titel

Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on

Conference_Location

Tokyo

Print_ISBN

978-1-4799-5260-1

Type

conf

DOI

10.1109/LTB-3D.2014.6886173

Filename

6886173