DocumentCode
1792620
Title
Low temperature and low pressure bump bonding realized by single-micrometer Ag-nanoparticle bumps
Author
Weixin Fu ; Kasahara, T. ; Okada, Atsushi ; Shoji, Shuji ; Shigetou, Akitsu ; Mizuno, Jun
Author_Institution
Dept. of Nanosci. & Nanoengineering, Waseda Univ., Tokyo, Japan
fYear
2014
fDate
15-16 July 2014
Firstpage
47
Lastpage
47
Abstract
A bonding method using single-micrometer bumps, which were formed by Ag nanoparticle, had been realized under low bonding temperature and low compressive stress. The bump diameter is 8 μm and the pitch is 16 μm. The bonding temperature was 250°C under compressive stress of about 41.4 MPa. A shear test was carried out and the strength of the bond could reach 5.89 MPa.
Keywords
compressive strength; integrated circuit bonding; nanoparticles; shear strength; silver; three-dimensional integrated circuits; Ag; low bonding temperature; low compressive stress; low pressure bump bonding; shear test; single-micrometer Ag-nanoparticle bumps; size 8 mum; temperature 250 degC; Bonding; Compressive stress; Educational institutions; Plasma temperature; Silicon; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on
Conference_Location
Tokyo
Print_ISBN
978-1-4799-5260-1
Type
conf
DOI
10.1109/LTB-3D.2014.6886186
Filename
6886186
Link To Document