Fine-pitch interconnection by hybrid Cu/Sn-adhesive bonding for 3D integration

Author

Ohyama, Minoru ; Mizuno, Jun ; Shoji, Shuji ; Nimura, Masatsugu ; Nonaka, Tomomi ; Shinba, Yoichi ; Shigetou, Akitsu

Author_Institution

Waseda Univ., Tokyo, Japan

fYear

2014

fDate

15-16 July 2014

Firstpage

48

Lastpage

48

Abstract

In this study, we developed 8 μm-pitch microbump bonding and encapsulating by hybrid Cu/Sn-adhesive bonding technology. As an adhesive material, we used a non-conductive film (NCF). To realize simultaneous bonding of a metal and an adhesive, planar structure was formed by chemical mechanical polishing (CMP). After the planarization, hybrid bonding was carried out at 250 °C for 60 s. From scanning electron microscopic (SEM) observation of the bonded sample, it was confirmed that 8 μm-pitch bump bonding and the NCF filling 2.5-μm gap between the chip and substrate were performed at the same time. This result indicated that hybrid bonding was effective in fine-pitch bonding and encapsulating for future three-dimensional (3D) integration.

Keywords

adhesive bonding; chemical mechanical polishing; copper; encapsulation; fine-pitch technology; integrated circuit interconnections; integrated circuit packaging; scanning electron microscopy; three-dimensional integrated circuits; tin; 3D integration; Cu-Sn; SEM observation; adhesive material; chemical mechanical polishing; encapsulation; fine-pitch bonding; fine-pitch interconnection; hybrid Cu/Sn-adhesive bonding; microbump bonding; nonconductive film; scanning electron microscopic observation; temperature 250 degC; time 60 s; Bonding; Scanning electron microscopy; Substrates; Surface treatment; Three-dimensional displays; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on

Conference_Location

Tokyo

Print_ISBN

978-1-4799-5260-1

Type

conf

DOI

10.1109/LTB-3D.2014.6886187

Filename

6886187