Annealing temperature dependence of SAB based Si/Si junctions

Author

Morimoto, Masayuki ; Liang, Justin ; Nishida, Shuichi ; Chai Li ; Takemura, Kentaro ; Shigekawa, Naoteru

Author_Institution

Grad. Sch. of Eng., Osaka City Univ., Osaka, Japan

fYear

2014

fDate

15-16 July 2014

Firstpage

52

Lastpage

52

Abstract

Effects of annealing on SAB based Si/Si junctions were investigated by TEM observation and current-voltage (I-V) measurement. We observed amorphous like layer at the Si/Si interface prior to the annealing, which seemed to vanish after the annealing at 1000 °C. The I-V characteristics of Si/Si junctions showed that the current decreased when the junctions were annealed at comparatively lower temperatures. The current increased when the junctions were annealed at higher temperatures.

Keywords

annealing; elemental semiconductors; semiconductor junctions; silicon; surface treatment; transmission electron microscopy; wafer bonding; SAB based Si-Si junctions; Si; TEM observation; amorphous like layer; annealing temperature dependence; current-voltage measurement; surface-activated bonding; temperature 1000 degC; Annealing; Bonding; Junctions; Silicon; Substrates; Temperature; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on

Conference_Location

Tokyo

Print_ISBN

978-1-4799-5260-1

Type

conf

DOI

10.1109/LTB-3D.2014.6886191

Filename

6886191