Title :
Investigation on the effects of annealing process on the electrical properties of n+-Si/n-SiC junctions
Author :
Jianbo Liang ; Nishida, Shuichi ; Hayashi, Teruaki ; Morimoto, Masayuki ; Shigekawa, Naoteru ; Arai, Manabu
Author_Institution :
Dept. of Appl. Phys. & Electron., Osaka City Univ., Osaka, Japan
Abstract :
The effects of annealing process on the electrical properties of n+-Si/n-SiC junctions fabricated by using surface-activated bonding are investigated. It is found by measuring their current-voltage (I-V) characteristics that the reverse-bias current decreases and activation energy increases with increasing annealing temperature to 700 °C.
Keywords :
annealing; elemental semiconductors; integrated circuit bonding; semiconductor heterojunctions; silicon; silicon compounds; surface treatment; three-dimensional integrated circuits; wide band gap semiconductors; Si-SiC; activation energy; annealing process; current-voltage characteristics; electrical properties; n+-Si/n-SiC junctions; reverse-bias current; surface-activated bonding; temperature 700 degC; Annealing; Bonding; Current measurement; Junctions; Silicon; Silicon carbide; Temperature measurement;
Conference_Titel :
Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4799-5260-1
DOI :
10.1109/LTB-3D.2014.6886192
