• DocumentCode
    1792634
  • Title

    Annealing characteristics of p+-Si/n-4H-SiC junctions by using surface-activated bonding

  • Author

    Nishida, Shuichi ; Liang, Justin ; Hayashi, Teruaki ; Morimoto, Masayuki ; Shigekawa, Naoteru ; Arai, Manabu

  • Author_Institution
    Grad. Sch. of Eng., Osaka City Univ., Osaka, Japan
  • fYear
    2014
  • fDate
    15-16 July 2014
  • Firstpage
    54
  • Lastpage
    54
  • Abstract
    The effects of annealing on p+-Si/n-4H-SiC heterojunctons fabricated by using surface-activated bonding (SAB) were investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. I-V characteristics were improved and the flat-band voltages extracted from C-V characteristics were smaller by annealing at higher temperatures.
  • Keywords
    annealing; capacitance; elemental semiconductors; integrated circuit bonding; p-n heterojunctions; silicon; silicon compounds; surface treatment; three-dimensional integrated circuits; wide band gap semiconductors; Si-SiC; annealing; capacitance-voltage measurements; current-voltage measurements; flat-band voltages; p+-Si/n-4H-SiC junctions; surface-activated bonding; Annealing; Bonding; Capacitance-voltage characteristics; Junctions; Silicon carbide; Temperature; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on
  • Conference_Location
    Tokyo
  • Print_ISBN
    978-1-4799-5260-1
  • Type

    conf

  • DOI
    10.1109/LTB-3D.2014.6886193
  • Filename
    6886193
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1792634