DocumentCode
1792811
Title
II-VI/III-N based micro-chip green-yellow laser converters
Author
Ivanov, S.V. ; Sorokin, S.V. ; Gronin, S.V. ; Sedova, I.V. ; Vainilovich, A.G. ; Lutsenko, E.V.
Author_Institution
Ioffe Phys.-Tech. Inst., St. Petersburg, Russia
fYear
2014
fDate
June 30 2014-July 4 2014
Firstpage
1
Lastpage
1
Abstract
We report on recent progress in developing green-yellow II-VI/III-N laser converters comprising low-threshold (nGaN LD, mounted in a micro-chip package. Novel design and technological approaches in further reducing threshold power density of the II-VI structures and extending their wavelength to yellow range are discussed.
Keywords
II-VI semiconductors; III-V semiconductors; gallium compounds; microchip lasers; quantum dot lasers; wide band gap semiconductors; GaN; II-VI structures; II-VI-III-N based microchip green-yellow laser converters; laser diodes; microchip package; threshold power density;
fLanguage
English
Publisher
ieee
Conference_Titel
Laser Optics, 2014 International Conference
Conference_Location
Saint Petersburg
Print_ISBN
978-1-4799-3884-1
Type
conf
DOI
10.1109/LO.2014.6886289
Filename
6886289
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