The effect of mercury lamp irradiation on the threshold current density of electron beam pumped ZnSe-based lasers

Author

Zverev, M.M. ; Gamov, N.A. ; Zhdanova, E.V. ; Peregoudov, D.V. ; Studionov, V.B. ; Gronin, S.V. ; Sedova, I.V. ; Sorokin, S.V. ; Ivanov, S.V.

Author_Institution

Moscow State Tech. Univ. of Radio Eng., Electron. & Automations, Moscow, Russia

fYear

2014

fDate

June 30 2014-July 4 2014

Firstpage

1

Lastpage

1

Abstract

It has been demonstrated that after 3 - 5 minutes irradiation of the MBE grown ZnSe-based electron beam pumped laser heterostructures with the light intensity of mercury lamp of 40-60 W/cm², the luminescence intensity increased by ~20-50 %, whereas the threshold current density reduced by 20-40 %. Evidently, the results could be explained by the annealing (or optical transformation) the initial point defects in the active area of the laser heterostructure induced by low-temperature growth.

Keywords

II-VI semiconductors; annealing; current density; electron beam pumping; fluorescence; molecular beam epitaxial growth; quantum well lasers; semiconductor heterojunctions; wide band gap semiconductors; zinc compounds; MBE grown ZnSe-based electron beam pumped laser heterostructures; ZnSe; active area; annealing; light intensity; low-temperature growth; luminescence intensity; mercury lamp irradiation effect; optical transformation; point defects; threshold current density; time 3 min to 5 min; Automation; Laser beams; Molecular beam applications; Molecular beam epitaxial growth; Pump lasers; QW-structures; electron-beam pumped lasers; mercury lamp;

fLanguage

English

Publisher

ieee

Conference_Titel

Laser Optics, 2014 International Conference

Conference_Location

Saint Petersburg

Print_ISBN

978-1-4799-3884-1

Type

conf

DOI

10.1109/LO.2014.6886303

Filename

6886303