• DocumentCode
    1792930
  • Title

    A novel approach for power-gating technique with Improved Efficient Charge Recovery Logic

  • Author

    Shravan, C. ; Kumar, C. Pavan ; Sivani, K.

  • fYear
    2014
  • fDate
    19-20 Sept. 2014
  • Firstpage
    1
  • Lastpage
    8
  • Abstract
    In this paper, a novel approach for power gating technique with Improved Efficient Charge Recovery Logic (IECRL) introduced. An Asynchronous Fine-Grain Power-Gated Logic Technique (AFPLT) developed by Improved Efficient Charge Recovery Logic, which gives logic function to the next succeeding stage. In the AFPLT circuit, IECRL gates acquires power from hand shake controller and become active only when performing required executions. In active mode the leakage currents are suppressed by providing infinite resistance path through the NMOS transistor in pull-up network. In in-active mode IECRL gates are not taken any amount of power, this gives negligible leakage power dissipation. Its maximum power saving against ECRL is up to 82.88% at 100 MHZ input data rate. Similarly the power saving against static CMOS logic is up to 92.68% at 100 MHZ. In AFPLT circuit handshake controller is used to provide power to the IECRL gate and which performs the hand shaking with the neighboring stages. In order to reduce the energy dissipation, the PCR mechanism is used in AFPLT pipeline structure. PCR mechanism is used to transfer the charge of discharging phase of IECRL gate to evaluate phase of the another IECRL gate. Early discharging of IECRL gate can be provided by enhanced C-element called C*-element.
  • Keywords
    CMOS logic circuits; MOSFET; asynchronous circuits; leakage currents; AFPLT circuit; AFPLT pipeline structure; C*-element; CMOS logic; IECRL; NMOS transistor; PCR mechanism; asynchronous fine-grain power-gated logic technique; charge transfer; energy dissipation reduction; hand shake controller; improved efficient charge recovery logic; infinite resistance path; leakage current suppression; power dissipation; power gating technique; power saving; pull-up network; CMOS integrated circuits; Energy dissipation; Logic gates; MOSFET; Power dissipation; Silicon; Adiabatic; Asynchronous; ECRL; IECRL; Low Power; PCR; Power-Gating;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Smart Electric Grid (ISEG), 2014 International Conference on
  • Conference_Location
    Guntur
  • Print_ISBN
    978-1-4799-4104-9
  • Type

    conf

  • DOI
    10.1109/ISEG.2014.7005583
  • Filename
    7005583