DocumentCode
1793295
Title
Waveguide Ge/Si avalanche photodetector with a unique low-height-profile device structure
Author
Tsung-Yang Liow ; Ning Duan ; Lim, Andy Eu-Jin ; Xiaoguang Tu ; Mingbin Yu ; Guo-Qiang Lo
Author_Institution
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
fYear
2014
fDate
9-13 March 2014
Firstpage
1
Lastpage
3
Abstract
We present a SACM waveguide Ge/Si APD capable of 25 Gb/s operation at 1.3 μm, with a unique low-height-profile structure which enables low dark current. A maximum sensitivity improvement of ~9 dBm can be obtained.
Keywords
avalanche photodiodes; elemental semiconductors; germanium; optical waveguides; photodetectors; silicon; Ge-Si; bit rate 25 Gbit/s; low dark current; low-height-profile device structure; maximum sensitivity; separate-absorption-charge-multiplication device; waveguide Ge/Si avalanche photodetector; wavelength 1.3 mum; Absorption; Bandwidth; Dark current; Electric fields; Gain; Optical waveguides; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communications Conference and Exhibition (OFC), 2014
Conference_Location
San Francisco, CA
Print_ISBN
978-1-5575-2994-7
Type
conf
DOI
10.1364/OFC.2014.M2G.6
Filename
6886552
Link To Document