• DocumentCode
    1793339
  • Title

    A wideband 95–140 GHz high efficiency PA in 28nm CMOS

  • Author

    Dafna, Yuval ; Cohen, Emmanuel ; Socher, Eran

  • Author_Institution
    Intel Corp., Haifa, Israel
  • fYear
    2014
  • fDate
    3-5 Dec. 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper presents a D-band PA on 28nm CMOS demonstrating excellent gain power dissipation and bandwidth tradeoffs. It features above 10 dB gain in the frequency range 95-140 GHz while drawing 30 mA from a 1.1-V supply and 0dBm P1dB & 7dBm saturation power. The use of low K transformers enables an increase in PA BW without power and area penalty. A modified transistor core layout boosts PA gain by 0.5dB per stage. PA die area with pads is 0.55×0.4 mm2 and without pads 0.4×0.2 mm2.
  • Keywords
    CMOS integrated circuits; millimetre wave power amplifiers; wideband amplifiers; CMOS; D-band PA; PA gain; bandwidth tradeoff; complementary metal oxide semiconductor; frequency 95 GHz to 140 GHz; power dissipation; saturation power; size 28 nm; transistor core layout; voltage 1.1 V; wideband high efficiency power amplifier; CMOS integrated circuits; CMOS technology; Frequency measurement; Gain; Layout; Transformer cores; Transistors; Cross couple; D-band; PA; PAE; low-K;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical & Electronics Engineers in Israel (IEEEI), 2014 IEEE 28th Convention of
  • Conference_Location
    Eilat
  • Print_ISBN
    978-1-4799-5987-7
  • Type

    conf

  • DOI
    10.1109/EEEI.2014.7005799
  • Filename
    7005799
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1793339