• DocumentCode
    1794434
  • Title

    High performance 1.3µm InAs quantum dot lasers epitaxially grown on silicon

  • Author

    Liu, Alan Y. ; Chong Zhang ; Snyder, Andrew ; Lubychev, Dimitri ; Fastenau, Joel M. ; Liu, Amy W. K. ; Gossard, Arthur C. ; Bowers, John E.

  • Author_Institution
    Mater. Dept., Univ. of California Santa Barbara, Santa Barbara, CA, USA
  • fYear
    2014
  • fDate
    9-13 March 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We demonstrate 1.3 μm InAs quantum dot lasers on silicon by molecular beam epitaxial growth with low thresholds (16 mA), high output power (>50 mW), high T0 (>200 K), and high temperature lasing (115 °C).
  • Keywords
    III-V semiconductors; indium compounds; molecular beam epitaxial growth; quantum dot lasers; semiconductor epitaxial layers; semiconductor growth; silicon; InAs; Si; current 16 mA; high T0; high output power; high temperature lasing; low thresholds; molecular beam epitaxial growth; quantum dot lasers; temperature 115 degC; wavelength 1.3 mum; Gallium arsenide; Quantum dot lasers; Silicon; Substrates; Surface emitting lasers; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Fiber Communications Conference and Exhibition (OFC), 2014
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    978-1-5575-2994-7
  • Type

    conf

  • DOI
    10.1364/OFC.2014.W4C.5
  • Filename
    6887173
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1794434