• DocumentCode
    1795713
  • Title

    10 GHz bandwidth of Si avalanche photodiode fabricated by standard 0.18 цm CMOS process

  • Author

    Iiyama, Koichi ; Shimotori, Toshiyuki ; Gyobu, Ryoichi ; Hishiki, Takuya ; Marayama, Takeo

  • Author_Institution
    Kanazawa Univ., Kanazawa, Japan
  • fYear
    2014
  • fDate
    6-10 July 2014
  • Firstpage
    243
  • Lastpage
    244
  • Abstract
    Silicon avalanche photodiode was fabricated by O.lSjum CMOS process and was characterized. The bandwidth of 10GHz with the sensitivity of 0.1 AW was achieved with the electrode spacing of 0.84/urn and the detection area of 10×10/urn2.
  • Keywords
    CMOS integrated circuits; avalanche photodiodes; electrodes; elemental semiconductors; silicon; CMOS process; Si; avalanche photodiode; bandwidth 10 GHz; detection area; electrode spacing; sensitivity; size 0.18 mum; Avalanche photodiodes; Bandwidth; CMOS process; Electrodes; Radio frequency; Silicon; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Fibre Technology, 2014 OptoElectronics and Communication Conference and Australian Conference on
  • Conference_Location
    Melbourne, VIC
  • Type

    conf

  • Filename
    6888063
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1795713