Title :
High speed operation of SOI PIN photodiodes fabricated by CMOS compatible process
Author :
Maruyama, Tetsuhiro ; Maekita, Kazuaki ; Gen Li ; Iiyama, Koichi
Author_Institution :
Kanazawa Univ., Kanazawa, Japan
Abstract :
Si PIN photodiodes were fabricated on silicon-on-insulator with CMOS compatible process. Its characteristic was measured at 0.8 μm wavelength region. Ultra-low dark current of 14 pA was obtained at a bias voltage of -2 V. At the bias voltage of -10 V, a responsivity and a bandwidth were 5 mA/W and 6.7 GHz, respectively.
Keywords :
CMOS integrated circuits; dark conductivity; p-i-n photodiodes; silicon-on-insulator; CMOS compatible process; SOI PIN photodiodes; Si; current 14 pA; dark current; frequency 6.7 GHz; responsivity; silicon-on-insulator; wavelength 0.8 mum; Bandwidth; Dark current; Optical device fabrication; Optical waveguides; Photodiodes; Silicon; Vertical cavity surface emitting lasers;
Conference_Titel :
Optical Fibre Technology, 2014 OptoElectronics and Communication Conference and Australian Conference on
Conference_Location :
Melbourne, VIC
