Title :
Optical bandwidth enhacnement at high-temperature operation of light emitting-transistors
Author :
I-Te Lee ; Hao-Hsiang Yang ; Yu-Wen Chern ; Chao-Hsin Wu
Author_Institution :
Grad. Inst. of Phontonics & Optoelectron., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
The authors demonstrate the improved electrical characteristics, i.e. larger current gain, and optical modulation responses of the LET from 25°C to 55°C due to reduced thermionic emission lifetime of quantum-wells at high temperature.
Keywords :
field effect transistors; integrated optoelectronics; light emitting devices; optical modulation; quantum wells; thermionic emission; current gain; electrical characteristics; high-temperature operation; light emitting-transistors; optical bandwidth enhancement; optical modulation responses; quantum wells; temperature 25 degC to 55 degC; thermionic emission lifetime; Bandwidth; High-speed optical techniques; Optical fibers; Optical modulation; Stimulated emission; Temperature;
Conference_Titel :
Optical Fibre Technology, 2014 OptoElectronics and Communication Conference and Australian Conference on
Conference_Location :
Melbourne, VIC
