DocumentCode :
1796353
Title :
Fabrication and characterization of tungsten-oxide-based memristors for neuromorphic circuits
Author :
Wheeler, D. ; Alvarado-Rodriguez, Ivan ; Elliott, K. ; Kally, James ; Hermiz, John ; Hunt, Hugh ; Hussain, Tauqeer ; Srinivasa, Narayan
Author_Institution :
Microelectron. Lab., HRL Labs., LLC, Malibu, CA, USA
fYear :
2014
fDate :
29-31 July 2014
Firstpage :
1
Lastpage :
2
Abstract :
We report a fabrication process and electrical results for tungsten-oxide-based memristors compatible with CMOS-based neuromorphic circuits. Memristor crossbar arrays are fabricated on partially-processed wafers from a CMOS foundry to form hybrid FET-memristor circuits that can serve as analog memory elements for synaptic weight storage. Successful integration is demonstrated through the programming and reading of memristor crossbar array elements addressed through a CMOS multiplexer/demultiplexer.
Keywords :
CMOS analogue integrated circuits; memristors; neural nets; tungsten compounds; CMOS foundry; CMOS multiplexer-demultiplexer; CMOS-based neuromorphic circuits; analog memory elements; hybrid FET-memristor circuits; memristor crossbar array element programming; memristor crossbar array element reading; memristor crossbar arrays; partially-processed wafers; synaptic weight storage; tungsten-oxide-based memristor characterization; tungsten-oxide-based memristor fabrication; CMOS integrated circuits; Electrodes; Fabrication; Memristors; Neuromorphics; Programming; Tungsten;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Cellular Nanoscale Networks and their Applications (CNNA), 2014 14th International Workshop on
Conference_Location :
Notre Dame, IN
Type :
conf
DOI :
10.1109/CNNA.2014.6888611
Filename :
6888611
Link To Document :
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