• DocumentCode
    1796357
  • Title

    Switching layer engineering for memristive devices

  • Author

    Hao Jiang ; Can Li ; Qiangfei Xia

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Massachusetts, Amherst, MA, USA
  • fYear
    2014
  • fDate
    29-31 July 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We used reactive sputtering as a tool to deposit transition metal oxide materials with tunable chemical composition and electrical properties. We further developed heterogeneous bilayer memristive devices with designed switching properties. Finally, we developed a low voltage memristive based on chemically produced, 1 nm thick silicon oxide.
  • Keywords
    chemical analysis; memristors; silicon compounds; sputter deposition; transition metals; SiO; electrical properties; heterogeneous bilayer memristive devices; low voltage memristive devices; reactive sputtering; size 1 nm; switching layer engineering; transition metal oxide material deposition; tunable chemical composition; Switches; SiOx devices; bilayer devices; memristor; reactive sputtering; switching layer;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Cellular Nanoscale Networks and their Applications (CNNA), 2014 14th International Workshop on
  • Conference_Location
    Notre Dame, IN
  • Type

    conf

  • DOI
    10.1109/CNNA.2014.6888616
  • Filename
    6888616
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1796357