• DocumentCode
    1797031
  • Title

    A 1V input, 3-to-6V output, integrated 58%-efficient charge-pump with hybrid topology and parasitic energy collection for 66% area reduction and 11% efficiency improvement

  • Author

    Jen-Huan Tsai ; Sheng-An Ko ; Hui-Huan Wang ; Chia-Wei Wang ; Hsin Chen ; Po-Chiun Huang

  • Author_Institution
    Nat. Tsing-Hua Univ., Hsinchu, Taiwan
  • fYear
    2014
  • fDate
    10-12 Nov. 2014
  • Firstpage
    233
  • Lastpage
    236
  • Abstract
    This paper presents a low-area, high-efficiency hybrid 6-stage voltage multiplier by cascoding Dickson chargepumps and modified Cockcroft-Walton charge-pumps, and paralleling them with auxiliary charge-pumps. The proposed architecture obtains a good area and efficiency performance without using high-V devices or external capacitors. Implemented in a standard 0.18-μm CMOS process, the prototype provides a wide output range of 3-6V and 30-240μA load from a 1-V supply with an efficiency of 48-58% (52% at 6V). By using on-chip MOS capacitors as internal pumping capacitors, a 66% area reduction is gained. The area shrinks to 0.05mm2 per 9× interleaved cell. The efficiency loss due to parasitics is compensated by creating auxiliary parasitic pumping paths to collect parasitic energy. With this feed-forward charge-pump, the efficiency increases extra 11%. Higher efficiency is thus measured than most reported on-chip Dickson CPs and cascoded doublers of comparable gain.
  • Keywords
    CMOS analogue integrated circuits; MOS capacitors; charge pump circuits; voltage multipliers; CMOS process; Dickson chargepumps; area reduction; auxiliary charge-pumps; auxiliary parasitic pumping paths; cascoded doublers; charge-pump; current 30 muA to 40 muA; efficiency 48 percent to 58 percent; efficiency improvement; efficiency loss; efficiency performance; feed-forward charge-pump; hybrid topology; internal pumping capacitors; low-area high-efficiency hybrid 6-stage voltage multiplier; modified Cockcroft-Walton charge-pumps; on-chip Dickson CP; on-chip MOS capacitors; parasitic energy; parasitic energy collection; size 0.18 mum; voltage 1 V; voltage 3 V to 6 V; CMOS integrated circuits; Capacitors; Charge pumps; Clocks; Stress; Switches; Topology; Charge-pump; DC-DC boost converter;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference (A-SSCC), 2014 IEEE Asian
  • Conference_Location
    KaoHsiung
  • Print_ISBN
    978-1-4799-4090-5
  • Type

    conf

  • DOI
    10.1109/ASSCC.2014.7008903
  • Filename
    7008903