DocumentCode
1797033
Title
A 12-V charge pump-based square wave driver in 65-nm CMOS technology
Author
Ismail, Yousr ; Yang, Chih-Kong Ken
Author_Institution
Dept. of Electr. Eng., Univ. of California, Los Angeles, Los Angeles, CA, USA
fYear
2014
fDate
10-12 Nov. 2014
Firstpage
237
Lastpage
240
Abstract
This paper presents a high-voltage output stage producing signals well beyond the voltage ratings of standard devices in a nanometer-scale CMOS technology. The driver is a two-level, switched capacitor output stage that combines both voltage conversion and pulse drive. The design is highly modular and enables extended device-stacking seamlessly and with little overhead. The driver achieves a peak power efficiency of 64%, a minimum drive resistance of 3.7KΩ and occupies an area of 0.06mm2.
Keywords
CMOS integrated circuits; charge pump circuits; driver circuits; nanotechnology; square-wave generators; switched capacitor networks; charge pump-based square wave driver; nanometer-scale CMOS technology; pulse drive; resistance 3.7 kohm; size 0.06 mm; size 65 nm; switched capacitor; voltage 12 V; voltage conversion; CMOS integrated circuits; Capacitors; Charge pumps; Clocks; Logic gates; Resistance; Transistors; Charge pumps; driver circuits; high-voltage techniques; transistor stacking;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference (A-SSCC), 2014 IEEE Asian
Conference_Location
KaoHsiung
Print_ISBN
978-1-4799-4090-5
Type
conf
DOI
10.1109/ASSCC.2014.7008904
Filename
7008904
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