22.5 dB open-loop gain, 31 kHz GBW pseudo-CMOS based operational amplifier with a-IGZO TFTs on a flexible film

Author

Ishida, K. ; Shabanpour, R. ; Boroujeni, Bahman K. ; Meister, T. ; Carta, C. ; Ellinger, F. ; Petti, L. ; Munzenrieder, Niko S. ; Salvatore, G.A. ; Troster, G.

Author_Institution

Tech. Univ. Dresden, Dresden, Germany

fYear

2014

fDate

10-12 Nov. 2014

Firstpage

313

Lastpage

316

Abstract

This paper presents an operational amplifier based on pseudo-CMOS blocks and integrated in a flexible a-IGZO TFT technology. The circuit consists of only nMOS transistors, and the pair of active loads is in a pseudo-CMOS configuration. These active loads allow various kinds of common mode feedback schemes or cross-coupled connection, typical for CMOS operational amplifiers. The proposed amplifier is fabricated on a flexible film, and characterized with 5 V supply voltage and an output load capacitance of 15 pF. The measured open-loop gain is 22.5 dB, which is the highest reported for operational amplifiers in metal-oxide TFT technology. The measured bandwidth and gain bandwidth products are 5.6 kHz, and 31 kHz, respectively with 160 μW power consumption, which is lowest among flexible operational amplifies.

Keywords

CMOS integrated circuits; MOSFET; flexible electronics; operational amplifiers; IGZO TFT; bandwidth 31 kHz; bandwidth 5.6 kHz; capacitance 15 pF; common mode feedback schemes; cross-coupled connection; flexible film; gain 22.5 dB; metal-oxide TFT technology; nMOS transistors; operational amplifier; power 160 muW; pseudo-CMOS blocks; voltage 5 V; Bandwidth; CMOS integrated circuits; Gain; Inverters; MOSFET; Operational amplifiers; Thin film transistors; Flexible; a-IGZO TFT; active load; low power; operational amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference (A-SSCC), 2014 IEEE Asian

Conference_Location

KaoHsiung

Print_ISBN

978-1-4799-4090-5

Type

conf

DOI

10.1109/ASSCC.2014.7008923

Filename

7008923