DocumentCode :
179860
Title :
Influence of nonequilibrium temperature and charge carriers on the Ohm´s law in a bipolar semiconductor
Author :
Gurevich, Yuri G. ; Lashkevych, Igor
Author_Institution :
Dept. de Fis., CINVESTAV-IPN, Mexico City, Mexico
fYear :
2014
fDate :
Sept. 29 2014-Oct. 3 2014
Firstpage :
1
Lastpage :
4
Abstract :
The linear electrical conductivity of a bipolar semiconductor which is connected to a metal from both sides is investigated in general case, i.e., when the influence of both nonequilibrium charge carriers (electrons and holes) and nonequilibrium temperature on transport of electrical charges is taken into account. Let us notice that the electrical and energy nonequilibriums arise automatically in a bipolar semiconductor when electrical current flows even in a linear approximation with respect to an electrical current. The expression for the electrical conductivity is obtained for a bipolar semiconductor which depends on the electrical conductivity of electrons and holes, the thermal conductivity, the bandgap, the lifetime of charge carriers, the surface recombination rate on a semiconductor-metal contact.
Keywords :
carrier lifetime; electron-hole recombination; energy gap; ohmic contacts; polar semiconductors; semiconductor-metal boundaries; surface conductivity; surface recombination; thermal conductivity; Ohm´s law; band gap; bipolar semiconductor; charge carrier lifetime; electrical charge transport; electrical current flow; electron-hole electrical conductivity; energy nonequilibriums; linear approximation; linear electrical conductivity; nonequilibrium charge carriers; nonequilibrium temperature; semiconductor-metal contact; surface recombination rate; thermal conductivity; Charge carrier processes; Conductivity; Electric potential; Radiative recombination; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Engineering, Computing Science and Automatic Control (CCE), 2014 11th International Conference on
Conference_Location :
Campeche
Print_ISBN :
978-1-4799-6228-0
Type :
conf
DOI :
10.1109/ICEEE.2014.6978262
Filename :
6978262
Link To Document :
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