• DocumentCode
    1799033
  • Title

    Electrical properties of tetrapod zinc oxide thin films deposited by thermal-CVD method

  • Author

    Azhar, N.E.A. ; Shariffudin, S.S. ; Affendi, I.H.H. ; Herman, Sukreen Hana ; Rusop, M.

  • Author_Institution
    NANO-Electron. Centre (NET), Univ. Teknol. MARA, Shah Alam, Malaysia
  • fYear
    2014
  • fDate
    7-8 April 2014
  • Firstpage
    102
  • Lastpage
    105
  • Abstract
    Zinc oxide (ZnO) thin films were deposited by thermal chemical vapor deposition (TCVD) method. Gold (Au) metal was used as a catalyst to improve the growth of tetrapod ZnO structures. In this study, the substrates were deposited at 750°C to 800°C to study the temperature effect of tetrapod ZnO thin films. The surface morphology of ZnO thin films were characterized using field emission scanning electron microscope (FE-SEM). Energy dispersive X-ray (EDX) was analyzed to identify element composition of ZnO thin films. It exhibits the EDX spectrum was successful grown product which contains Zn and O only. The electrical properties were measured using 2-point probe I-V measurement. From I-V curve, the resistivity of ZnO thin films decreases, the films become more conductive as deposition temperature increased. The optical properties were measured through photoluminescence (PL) with wavelength 325 nm to 900 nm.
  • Keywords
    II-VI semiconductors; X-ray chemical analysis; chemical vapour deposition; electrical conductivity; field emission electron microscopy; photoluminescence; scanning electron microscopy; semiconductor growth; semiconductor thin films; surface morphology; wide band gap semiconductors; zinc compounds; EDX spectrum; FE-SEM; I-V curve; ZnO; catalyst; electrical properties; element composition; energy dispersive X-ray analysis; field emission scanning electron microscopy; gold metal; optical properties; photoluminescence; point probe I-V measurement; surface morphology; temperature 750 degC to 800 degC; tetrapod zinc oxide thin films; thermal chemical vapor deposition; thermal-CVD; wavelength 325 nm to 900 nm; Conductivity; Gold; Substrates; Temperature; Temperature measurement; Zinc oxide; Photoluminescence (PL); Resistivity; Thermal-CVD; Zinc oxide (ZnO) tetrapod; deposition temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer Applications and Industrial Electronics (ISCAIE), 2014 IEEE Symposium on
  • Conference_Location
    Penang
  • Print_ISBN
    978-1-4799-4352-4
  • Type

    conf

  • DOI
    10.1109/ISCAIE.2014.7010218
  • Filename
    7010218