DocumentCode :
1799088
Title :
Advances in triple junction photo diodes
Author :
Schidl, Stefan ; Hofbauer, Michael ; Schneider-Hornstein, Kerstin ; Zimmermann, Horst
fYear :
2014
fDate :
8-9 May 2014
Firstpage :
1
Lastpage :
4
Abstract :
Triple junction photo diodes are a type of photo diodes where three pn-junctions are vertically stacked on top of each other. Each of these pn-junctions has a distinctive spectral responsivity. Therefore, this type of photo diode is very useful for attaining a color sensitive photo diode for sensor applications. These diodes can be implemented in different standard semiconductor processes. In this work we compare three different implementations in BiCMOS (0.6 μm) and CMOS (90 nm and 0.35 μm) processes.
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; integrated optoelectronics; photodiodes; BiCMOS; CMOS; color-sensitive photodiode; pn-junctions; sensor applications; size 90 nm to 0.6 mum; spectral responsivity; standard semiconductor processes; triple junction photodiodes; BiCMOS integrated circuits; CMOS integrated circuits; CMOS process; Color; Junctions; Microwave filters; Semiconductor diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Systems Symposium (MESS), 2014
Conference_Location :
Vienna
Type :
conf
DOI :
10.1109/MESS.2014.7010251
Filename :
7010251
Link To Document :
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