DocumentCode
1799378
Title
AC and transient analysis of SJ VDMOS
Author
Kondekar, P.N. ; Naugarhiya, Alok
Author_Institution
Electron. & Commun. Eng., PDPM IIITDMJ, Jabalpur, India
fYear
2014
fDate
14-15 Nov. 2014
Firstpage
1
Lastpage
3
Abstract
In this paper, first time we propose a simple and accurate high frequency small signal model for Superjunction (SJ) Double Diffused MOS (VDMOS). Using this model we obtained the maximum switching frequency (fT) and it results are validated by numerical numerous simulator. Further, we have analyzed transient, ac and switching frequency response of the SJ VDMOS.
Keywords
MOSFET; semiconductor device models; transient analysis; transient response; AC analysis; SJ VDMOS; high frequency small signal model; maximum switching frequency; superjunction double diffused MOS; switching frequency response; transient analysis; transient response; Analytical models; Capacitance; Junctions; Logic gates; MOSFET; Switching frequency; Transient analysis; Area Specific Device Capacitance; BV; RDSonA; RESURF; SJ; SJ body diode; fT;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics and Telecommunications (ISETC), 2014 11th International Symposium on
Conference_Location
Timisoara
Print_ISBN
978-1-4799-7266-1
Type
conf
DOI
10.1109/ISETC.2014.7010737
Filename
7010737
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