DocumentCode :
1799381
Title :
3D self-heating electro-thermal model of multi-die IC
Author :
Nagy, Lukas ; Stopjakova, V. ; Chvala, Ales
Author_Institution :
Inst. of Electron. & Photonics, Slovak Univ. of Technol., Bratislava, Slovakia
fYear :
2014
fDate :
14-15 Nov. 2014
Firstpage :
1
Lastpage :
4
Abstract :
This paper addresses a development of self-heating electro-thermal model of a system-in-package (SiP) occupying several silicon dies within one IC package. Proposed model maintains very high accuracy of modeled parameters in the wide range of dynamic temperature fluctuations, which brings the thermal simulations of state-of-the-art ICs much closer to the real scenario. Presented work also introduces an alternative approach to simulating electro-thermal properties of selected SiP using pseudo-transient simulations which radically reduces required simulation time.
Keywords :
elemental semiconductors; silicon; system-in-package; thermal management (packaging); three-dimensional integrated circuits; 3D self-heating electrothermal model; IC package; Si; SiP; multidie IC; pseudo transient simulations; system-in-package; Accuracy; Couplers; Heating; Integrated circuit modeling; Silicon; Temperature measurement; Multi-die IC; Self-heating; System in package; Thermal modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics and Telecommunications (ISETC), 2014 11th International Symposium on
Conference_Location :
Timisoara
Print_ISBN :
978-1-4799-7266-1
Type :
conf
DOI :
10.1109/ISETC.2014.7010738
Filename :
7010738
Link To Document :
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