3D self-heating electro-thermal model of multi-die IC

Author

Nagy, Lukas ; Stopjakova, V. ; Chvala, Ales

Author_Institution

Inst. of Electron. & Photonics, Slovak Univ. of Technol., Bratislava, Slovakia

fYear

2014

fDate

14-15 Nov. 2014

Firstpage

1

Lastpage

4

Abstract

This paper addresses a development of self-heating electro-thermal model of a system-in-package (SiP) occupying several silicon dies within one IC package. Proposed model maintains very high accuracy of modeled parameters in the wide range of dynamic temperature fluctuations, which brings the thermal simulations of state-of-the-art ICs much closer to the real scenario. Presented work also introduces an alternative approach to simulating electro-thermal properties of selected SiP using pseudo-transient simulations which radically reduces required simulation time.

Keywords

elemental semiconductors; silicon; system-in-package; thermal management (packaging); three-dimensional integrated circuits; 3D self-heating electrothermal model; IC package; Si; SiP; multidie IC; pseudo transient simulations; system-in-package; Accuracy; Couplers; Heating; Integrated circuit modeling; Silicon; Temperature measurement; Multi-die IC; Self-heating; System in package; Thermal modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics and Telecommunications (ISETC), 2014 11th International Symposium on

Conference_Location

Timisoara

Print_ISBN

978-1-4799-7266-1

Type

conf

DOI

10.1109/ISETC.2014.7010738

Filename

7010738