DocumentCode
1799382
Title
Numeric modeling and analytical solution of ionizing irradiation induced charge in MOSFET structure oxide
Author
Rusanovschi, V.I. ; Avram, A.I.
Author_Institution
State Agency on Intellectual Property, Chisinau, Moldova
fYear
2014
fDate
14-15 Nov. 2014
Firstpage
1
Lastpage
4
Abstract
Generally, numeric modeling of induced charge MOS oxide is hard to determine. The main problems that appear consist in difficulty of verifying the results of calculation errors due to mathematical modeling. In this paper is proposed a method to solve the system equation that describes charge induced in MOS structures under ionizing irradiation process.
Keywords
MOSFET; numerical analysis; radiation effects; MOS structures; MOSFET structure oxide; analytical solution; induced charge MOS oxide; ionizing irradiation induced charge; mathematical modeling; numeric modeling; Charge carrier processes; Electric fields; Equations; MOSFET; Mathematical model; Numerical models; Radiation effects; MOS structures; charge accumulation; ionizing irradiation; modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics and Telecommunications (ISETC), 2014 11th International Symposium on
Conference_Location
Timisoara
Print_ISBN
978-1-4799-7266-1
Type
conf
DOI
10.1109/ISETC.2014.7010739
Filename
7010739
Link To Document