Title :
Numeric modeling and analytical solution of ionizing irradiation induced charge in MOSFET structure oxide
Author :
Rusanovschi, V.I. ; Avram, A.I.
Author_Institution :
State Agency on Intellectual Property, Chisinau, Moldova
Abstract :
Generally, numeric modeling of induced charge MOS oxide is hard to determine. The main problems that appear consist in difficulty of verifying the results of calculation errors due to mathematical modeling. In this paper is proposed a method to solve the system equation that describes charge induced in MOS structures under ionizing irradiation process.
Keywords :
MOSFET; numerical analysis; radiation effects; MOS structures; MOSFET structure oxide; analytical solution; induced charge MOS oxide; ionizing irradiation induced charge; mathematical modeling; numeric modeling; Charge carrier processes; Electric fields; Equations; MOSFET; Mathematical model; Numerical models; Radiation effects; MOS structures; charge accumulation; ionizing irradiation; modeling;
Conference_Titel :
Electronics and Telecommunications (ISETC), 2014 11th International Symposium on
Conference_Location :
Timisoara
Print_ISBN :
978-1-4799-7266-1
DOI :
10.1109/ISETC.2014.7010739
