DocumentCode
1800203
Title
Covering codes for multilevel flash memories
Author
Haymaker, Kathryn ; Kelley, Christine A.
Author_Institution
Dept. of Math., Univ. of Nebraska-Lincoln, Lincoln, NE, USA
fYear
2012
fDate
4-7 Nov. 2012
Firstpage
942
Lastpage
949
Abstract
Write-once-memory (WOM) and flash codes are used to increase the number of writes in flash memories in order to improve the lifetime of flash-based storage systems. An early construction method of binary WOM codes used cosets of a binary linear code in the writing process, and the covering radius of the code was used to determine the number of writes possible. In this paper, we show how to combine this method with nonbinary codes for multilevel flash cells, and introduce a new family of ternary WOM codes using the finite Euclidean geometry EG(m, 3).
Keywords
binary codes; flash memories; linear codes; binary WOM codes; binary linear code cosets; covering codes; finite Euclidean geometry; flash codes; flash-based storage systems; multilevel flash cells; multilevel flash memories; nonbinary codes; ternary WOM codes; write-once-memory; writing process;
fLanguage
English
Publisher
ieee
Conference_Titel
Signals, Systems and Computers (ASILOMAR), 2012 Conference Record of the Forty Sixth Asilomar Conference on
Conference_Location
Pacific Grove, CA
ISSN
1058-6393
Print_ISBN
978-1-4673-5050-1
Type
conf
DOI
10.1109/ACSSC.2012.6489155
Filename
6489155
Link To Document