DocumentCode
1800285
Title
Fast estimation of average leakage based on pre-characterizing standard cell
Author
Peng, Li ; Xi, Tian ; Hongshan, Nie ; Shaoshi, Yan
Author_Institution
Nat. Univ. of Defense Technol., Changsha
fYear
2007
fDate
Aug. 16 2007-July 18 2007
Abstract
In CMOS circuits, sub-threshold leakage (ISUB) has been an important issue during IC design. As technology keeps on scaling down, new leakage mechanisms such as bound to bound leakage (IBTBT) and gate tunneling leakage (IGATE) can´t still be neglected. Estimating the total leakage of a circuit at high level can help the designers to decide whether the design is eligible or should be modified. This paper introduced the main leakage mechanisms, including ISUB, IBTBT and IGATE. The authors have also proposed a method to estimate the average leakage quickly based on pre-characterizing standard cell with BSIM models considering the new mechanisms. The results obtained by experiment on ISCAS benchmark circuits show that the method can be used to get the total leakage value and give a early direction for IC design.
Keywords
CMOS integrated circuits; integrated circuit modelling; leakage currents; BSIM models; average CMOS cell leakage; bound to bound leakage; gate tunneling leakage; precharacterizing standard cell; sub-threshold leakage; CMOS integrated circuits; CMOS technology; Electrons; Instruments; Libraries; Measurement standards; P-n junctions; Table lookup; Threshold voltage; Tunneling; Leakage; cell;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Measurement and Instruments, 2007. ICEMI '07. 8th International Conference on
Conference_Location
Xi´an
Print_ISBN
978-1-4244-1136-8
Electronic_ISBN
978-1-4244-1136-8
Type
conf
DOI
10.1109/ICEMI.2007.4351216
Filename
4351216
Link To Document