DocumentCode :
1800367
Title :
High aspect ratio photo-assisted electro-chemical etching of silicon and its application for the fabrication of quantum wires and photonic band structures
Author :
Charlton, M.D.B. ; Lau, H.W. ; Parker, G.J.
Author_Institution :
Southampton Univ., UK
fYear :
1996
fDate :
35122
Firstpage :
42614
Lastpage :
42618
Abstract :
A photo-assisted electro-chemical etching technique has recently been developed by Lehmann for the fabrication of porous silicon and highly anisotropic trenches in silicon. The discovery of room temperature photo-luminescence of porous silicon and its suitability for the fabrication of photonic band structures has stimulated a large interest in the development of silicon as an optical material. We have developed the anodic etching technique for the fabrication of quantum wires and photonic band structures. We discuss the electro-chemical process in detail, and report the successful fabrication of a photonic band structure based on macro-porous silicon. The band structure shows a band gap for the H-polarisation state between 2.78 μm and 6.25 μm
Keywords :
electrochemistry; etching; optical constants; optical fabrication; photonic band gap; porous materials; semiconductor quantum wells; silicon; 2.78 mum; 6.25 mum; H-polarisation state; Si; band gap; electro-chemical process; high aspect ratio photo-assisted electro-chemical etching; highly anisotropic trenches; macro-porous silicon; photo-assisted electro-chemical etching technique; photonic band structure fabrication; photonic band structures; porous silicon; room temperature photo-luminescence; semiconductor quantum wire fabrication; silicon;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Microengineering Applications in Optoelectronics, IEE Colloquium on
Conference_Location :
London
Type :
conf
DOI :
10.1049/ic:19960244
Filename :
542843
Link To Document :
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