DocumentCode :
1800498
Title :
Study of plasma chemistry in plasma doping processes
Author :
Shu Qin ; Yuanzhong Zhou ; Chung Chan ; Jiqun Shao ; Denholm, Stewart
Author_Institution :
Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA
fYear :
1997
fDate :
19-22 May 1997
Firstpage :
151
Abstract :
Summary form only given. An empirical-analytic approach has been used for the plasma chemistry analysis of plasma ion implantation (PII) doping experiments. Least square (LS) fittings of SIMS profiles have been performed to find the relationship between gas, plasma, and dose compositions in multi-species plasmas and to optimize gas recipes and process conditions. A dynamic sheath model of the multi-species plasma has been used as a basic function for fitting. Good consistence between modeling and experiments for BF/sub 3/ and PH/sub 3/ PII doping processes was present. A PDP1 plasma simulation verified the results of the modeling.
Keywords :
ion implantation; least squares approximations; plasma applications; plasma sheaths; plasma simulation; secondary ion mass spectra; semiconductor doping; BF/sub 3/; PDP1 plasma simulation; PH/sub 3/; SIMS profiles; dose composition; dynamic sheath model; empirical-analytic approach; gas composition; least square fittings; modeling; multi-species plasmas; plasma chemistry; plasma chemistry analysis; plasma composition; plasma doping processes; plasma ion implantation doping; Gases; Nuclear and plasma sciences; Plasma chemistry; Plasma immersion ion implantation; Plasma sheaths; Plasma simulation; Plasma sources; Safety; Semiconductor device doping; Semiconductor process modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Science, 1997. IEEE Conference Record - Abstracts., 1997 IEEE International Conference on
Conference_Location :
San Diego, CA, USA
ISSN :
0730-9244
Print_ISBN :
0-7803-3990-8
Type :
conf
DOI :
10.1109/PLASMA.1997.604448
Filename :
604448
Link To Document :
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