DocumentCode
1800802
Title
Hydrodynamic and analytical models for plasma immersion ion implantation with dielectric substrates
Author
Yuanzhong Zhou ; Shu Qin ; Chung Chan
Author_Institution
Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA
fYear
1997
fDate
19-22 May 1997
Firstpage
152
Abstract
Summary form only given. The characteristics of the plasma sheath and ion energy during plasma immersion ion implantation (PIII) process are very important for the optimum configuration design and process control. A hydrodynamic model and a quasistatical model have been established to describe PIII process for dielectric substrates.
Keywords
dielectric materials; ion implantation; plasma applications; plasma sheaths; analytical models; dielectric substrates; hydrodynamic models; ion energy; optimum configuration design; plasma immersion ion implantation; plasma sheath; process control; quasistatical model; Analytical models; Dielectric substrates; Equations; Hydrodynamics; Plasma applications; Plasma immersion ion implantation; Plasma materials processing; Plasma measurements; Plasma sheaths; Plasma waves;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Science, 1997. IEEE Conference Record - Abstracts., 1997 IEEE International Conference on
Conference_Location
San Diego, CA, USA
ISSN
0730-9244
Print_ISBN
0-7803-3990-8
Type
conf
DOI
10.1109/PLASMA.1997.604449
Filename
604449
Link To Document