Title :
Towards compact modelling of Schottky barrier CNTFET
Author :
Najari, M. ; Frégonèse, S. ; Maneux, C. ; Zimmer, T. ; Mnif, H. ; Masmoudi, N.
Author_Institution :
Lab. LETI, Univ. Bordeaux 1, Bordeaux
Abstract :
Recently, Carbon nanotube field-effect transistors (CNTFETs) have been studied as an interesting alternative to CMOS transistors. CNTFETs can be fabricated with Ohmic or Schottky type contacts. In this paper, we present a compact model for the tunnel current trough a Schottky barrier based on the Wentzel-Kramers-Brillouin, "WKB" approximation of the transmission coefficient [1]. The results obtained with this model are compared with the measured I-V characteristics of a CNT Schottky diode device [2] and show good agreement.
Keywords :
Schottky barriers; Schottky diodes; approximation theory; carbon nanotubes; field effect transistors; ohmic contacts; semiconductor device models; CNT Schottky diode device; I-V characteristics; Ohmic contacts; Schottky barrier CNTFET; Schottky type contacts; Wentzel-Kramers-Brillouin approximation; carbon nanotube field-effect transistors; compact modelling; transmission coefficient; tunnel current; Analytical models; CNTFETs; Carbon nanotubes; Computational modeling; Electrodes; Ohmic contacts; Schottky barriers; Schottky diodes; Schottky gate field effect transistors; Semiconductor device modeling;
Conference_Titel :
Design and Technology of Integrated Systems in Nanoscale Era, 2008. DTIS 2008. 3rd International Conference on
Conference_Location :
Tozeur
Print_ISBN :
978-1-4244-1576-2
Electronic_ISBN :
978-1-4244-1577-9
DOI :
10.1109/DTIS.2008.4540245
