Dynamically reconfigurable logic gate cells and matrices using CNTFETs

Author

O´Connor, I. ; Liu, J. ; Navarro, D. ; Gaffiot, F.

Author_Institution

Lyon Inst. of Nanotechnol. (INL), Univ. of Lyon, Ecully

fYear

2008

fDate

25-27 March 2008

Firstpage

1

Lastpage

6

Abstract

This paper describes a family of novel dynamically reconfigurable logic gates with double-gate carbon nanotube field-effect transistors (DG-CNTFET). The design is based on a property specific to this device: ambivalence, enabling p-type or n-type behavior depending on the back-gate voltage. Through simulations using available models, these gates are shown to operate at 4 GHz. We subsequently compare these cells to conventional CMOS look up tables, and demonstrate how they can be used in matrices to achieve complex logical functions.

Keywords

carbon nanotubes; field effect transistors; logic design; logic gates; nanotube devices; CNTFET; double-gate carbon nanotube field-effect transistor; frequency 4 GHz; reconfigurable logic gate; CMOS logic circuits; CMOS technology; Circuit simulation; Computer architecture; Integrated circuit interconnections; MOSFET circuits; Parasitic capacitance; Reconfigurable logic; Transmission line matrix methods; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Design and Technology of Integrated Systems in Nanoscale Era, 2008. DTIS 2008. 3rd International Conference on

Conference_Location

Tozeur

Print_ISBN

978-1-4244-1576-2

Electronic_ISBN

978-1-4244-1577-9

Type

conf

DOI

10.1109/DTIS.2008.4540248

Filename

4540248