Title :
Reliability, test, and I/sub DDQ/ measurements
Author :
Hawkins, C.F. ; Keshavarzi, A. ; Soden, J.M.
Author_Institution :
Dept. of Electr. Eng. & Comput. Eng., New Mexico Univ., Albuquerque, NM, USA
Abstract :
I/sub DDQ/ measurements are strongly identified with CMOS IC testing, however I/sub DDQ/ also has long term links to IC reliability. This paper overviews the association of reliability and I/sub DDQ/ testing. Three reliability topics are discussed: fundamental failure mechanisms, the relation of I/sub DDQ/ to burn-in, and the use of test data to predict reliability performance.
Keywords :
CMOS integrated circuits; CMOS IC testing; I/sub DDQ/ measurements; IC reliability; burn-in; fundamental failure mechanisms; test data; Artificial intelligence; Atomic layer deposition; CMOS integrated circuits; Current density; Electromigration; Electrons; Failure analysis; Grain boundaries; Temperature; Testing;
Conference_Titel :
IDDQ Testing, 1997. Digest of Papers., IEEE International Workshop on
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-8186-8123-3
DOI :
10.1109/IDDQ.1997.633021
