Title :
Numerical modeling of repetitively pulsed discharges in flowing atmospheric plasmas
Author :
Nagulapally, M. ; Candler, G.V. ; Laux, C.O. ; Kruger, C.H.
Author_Institution :
Minnesota Univ., Minneapolis, MN, USA
Abstract :
Summary form only given, as follows. Numerical simulations are presented of a series of controlled repetitively pulsed experiments conducted at Stanford University. Recent analysis of the Stanford chemical kinetics and electrical discharge models shows that a repetitively pulsed electron heating strategy could provide a power budget reduction of over two orders of magnitude. The basis of this strategy is to leverage the finite recombination time of electrons and to increase the ionization efficiency by using voltage pulses of duration much shorter than the recombination time. We simulate the plasma by solving the Navier-Stokes equations that have been extended to account for the effect of finite rate chemical reactions, thermal non-equilibrium, and internal and collisional energy relaxation. The Stanford University two-temperature chemical kinetics model is used to describe the chemistry in the plasma. The reaction rates take into account electron temperatures when electrons are involved. The discharge region is modeled using the channel model suggested by Steenbeck. Preliminary results show very good agreement with electron density estimations from the measured electrical resistance of the plasma. For a pulsing frequency of 100 kHz, a pulse duration of 10 ns and a maximum pulse voltage of 10 kV the computations show that the electron number density increases from an initial value of 8.8 10/sup 11/ cm/sup -3/ a peak of 10/sup 13/ cm/sup -3/, then decays by an order of magnitude in about 10 /spl mu/s. The image shows the decay of electron number density as a function of time. The simulations are used to analyze the experimental results and further aid in scale-up.
Keywords :
Navier-Stokes equations; discharges (electric); numerical analysis; plasma chemistry; plasma flow; plasma heating; plasma simulation; plasma temperature; reaction kinetics theory; 10 kV; 10 mus; 100 kHz; Navier-Stokes equations; Stanford University; chemical kinetics; chemistry; collisional energy relaxation; controlled repetitively pulsed experiments; discharge region; electrical discharge models; electrical resistance; electron density estimations; electron number density; electron temperatures; finite rate chemical reactions; finite recombination time; flowing atmospheric plasmas; internal energy relaxation; ionization efficiency; maximum pulse voltage; numerical modeling; numerical simulations; power budget reduction; pulse duration; pulsing frequency; reaction rates; recombination time; repetitively pulsed discharges; repetitively pulsed electron heating strategy; scale-up; thermal nonequilibrium; two-temperature chemical kinetics model; voltage pulses; Chemical analysis; Electrons; Kinetic theory; Numerical models; Plasma chemistry; Plasma measurements; Plasma simulation; Plasma temperature; Spontaneous emission; Voltage;
Conference_Titel :
Pulsed Power Plasma Science, 2001. IEEE Conference Record - Abstracts
Conference_Location :
Las Vegas, NV, USA
Print_ISBN :
0-7803-7141-0
DOI :
10.1109/PPPS.2001.961049