Title :
A radiation hardened 1-M bit SRAM on SIMOX material
Author :
Houston, Ted ; Lu, Hsindao ; Yee, Eric ; Hite, Larry ; Rajgopal, Rajan ; Shen, C.C. ; Hwang, Jeong-mo ; Pollack, Gordon ; Cohn, Lewis
Author_Institution :
Texas Instrum. Inc., TX, USA
Abstract :
SOI technology and design combine to give a high performance radiation hardened 1M SRAM manufacturable at the 0.8 μm technology node. Features include a nominal 23 ns access time and a worst case minimum Write pulse of less than 15 ns, along with total dose and transient dose hardness, resistance to single event upset, and latch-up immunity. Detailed characterization results are presented in this paper.
Keywords :
CMOS memory circuits; SIMOX; SRAM chips; radiation hardening (electronics); 0.8 micron; 1 Mbit; 23 ns; CMOS/SOI technology; SEU resistance; SIMOX material; SRAM; Si; latchup immunity; radiation hardened static RAM; single event upset resistance; total dose hardness; transient dose hardness; Bonding; CMOS memory circuits; CMOS technology; Capacitance; Instruments; Manufacturing; Radiation hardening; Random access memory; Semiconductor films; Single event upset;
Conference_Titel :
Radiation Effects Data Workshop, 1994 IEEE
Print_ISBN :
0-7803-2022-0
DOI :
10.1109/REDW.1994.633028
