Title :
Transient and total dose irradiation of BESOI 4K SRAM
Author :
Hash, G.L. ; Schwank, J.R. ; Shaneyfelt, M.R.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
A BESOI 4K SRAM was characterized in transient and total dose radiation environments. Transient upset level was explored as a function of radiation pulse width. A total dose experiment was performed to determine the level at which read or write failures occurred. In addition the total dose level at which imprinting occurred was determined. It was shown that devices fabricated in bonded and etchback (BESOI) technology should exhibit high dose-rate upset levels (above 1010 rad(Si)/s) but may not be applicable for high total dose uses, especially if total dose imprinting is detrimental to the system. Total dose failures were observed above 4.3×105 rad(SiO2) and imprinting occurred between 4 and 6×104 rad(SiO2).
Keywords :
SRAM chips; failure analysis; integrated circuit reliability; integrated circuit testing; radiation effects; silicon-on-insulator; transient response; 4 Kbit; 4.3E5 rad; 4E4 to 6E4 rad; BESOI technology; SOI SRAM; Si; bonded/etchback technology; radiation pulse width; read failures; total dose irradiation; transient upset level; write failures; Circuit testing; Integrated circuit testing; Isolation technology; Photoconductivity; Pulse measurements; Random access memory; Silicon on insulator technology; Space technology; Space vector pulse width modulation; Substrates;
Conference_Titel :
Radiation Effects Data Workshop, 1994 IEEE
Print_ISBN :
0-7803-2022-0
DOI :
10.1109/REDW.1994.633029
