Title :
Observations of single event failure in power MOSFETs
Author :
Nichols, Donald K. ; McCarty, Kenneth P. ; Coss, James R. ; Waskiewicz, Al ; Groninger, Jerry ; Oberg, Dennis ; Wert, Jerry ; Majewski, Peter ; Koga, Rocky
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
This first compendium of single event test data for power MOSFETs provides failure thresholds from burnout or gate rupture for over 100 devices of eight manufacturers. Ordering the data has also provided some useful insights.
Keywords :
failure analysis; power MOSFET; radiation effects; semiconductor device reliability; semiconductor device testing; burnout; failure thresholds; gate rupture; power MOSFETs; single event failure; single event test data; Aerospace testing; Current measurement; Laboratories; MOSFETs; Manufacturing; Power transistors; Propulsion; Space technology; Temperature; Threshold voltage;
Conference_Titel :
Radiation Effects Data Workshop, 1994 IEEE
Print_ISBN :
0-7803-2022-0
DOI :
10.1109/REDW.1994.633035
