Title :
SEU and SEL response of the Westinghouse 64K E2PROM, Analog Devices AD7876 12-bit ADC, and the Intel 82527 serial communications controller
Author :
Sexton, F.W. ; Hash, G.L. ; Connors, M.P. ; Murray, J.R. ; Schwank, J.R. ; Winokur, P.S. ; Bradley, E.G.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
The Westinghouse SA3823 64K E2PROM radiation-hardened SONOS non-volatile memory exhibited a single-event-upset (SEU) threshold in the read mode of 60 MeV-cm2/mg and 40 MeV-cm2/mg for data latch errors. The minimum threshold for address latch errors was 35 MeV-cm2/mg. Hard errors were observed with Kr at VP= 8.5 V and with Xe at programming voltages (VP) as low as 7.5 V. No hard errors were observed with Cu at any angle up to VP=11 V. The system specification of no hard errors for Ar ions or lighter was exceeded. No single-event latchup (SEL) was observed in these devices for the conditions examined. The Analog Devices AD7876 12-bit analog-to-digital converter (ADC) had an upset threshold of 2 MeV-cm2/mg for all values of input voltage (Vin), while the worst-case saturation cross section of ∼2×10-3 cm2 as measured with Vin=4.49 V. No latchup was observed. The Intel 82C527 serial communications controller exhibited a minimum threshold for upset of 2 MeV-cm2/mg and a saturation cross section of about 5×10-4 cm2. For latchup the minimum threshold was measured at 17 MeV-cm2/mg, and cross section saturated at about 3×10-4 cm2. Error rates for the expected applications are presented.
Keywords :
CMOS digital integrated circuits; EPROM; analogue-digital conversion; error statistics; errors; integrated circuit reliability; integrated circuit testing; radiation effects; radiation hardening (electronics); ADC; Analog Devices AD7876; Intel 82527 serial communications controller; SEL response; SEU response; SONOS nonvolatile memory; Westinghouse 64K E2PROM; address latch errors; analog-to-digital converter; data latch errors; hard errors; radiation-hardened nonvolatile memory; single-event latchup; single-event-upset threshold; Aerospace testing; Hardware; Laboratories; PROM; Payloads; Performance evaluation; Sockets; Temperature measurement; Temperature sensors; Timing;
Conference_Titel :
Radiation Effects Data Workshop, 1994 IEEE
Print_ISBN :
0-7803-2022-0
DOI :
10.1109/REDW.1994.633036
