Analysis and design of 20 GHz VCOs using cross-coupled differential pair and balanced Colpitts topologies in SiGe:C BiCMOS technology

Author

Verdier, Jacques ; Pérez, José Cruz Núñez ; Gontrand, Christian

Author_Institution

Inst. des Nanotechnol. de Lyon, Villeurbanne

fYear

2008

fDate

25-27 March 2008

Firstpage

1

Lastpage

5

Abstract

The design and analysis of fully integrated voltage controlled oscillators (VCO) for 20 GHz low cost and low power communication system is presented in this paper. Two differential topologies have been studied: balanced Colpitts VCO and LC-VCO using a cross-coupled differential pair. We have focussed on oscillation frequency, tuning range, phase noise, and output power optimization and buffer stage specifications. SiGe:C hetero-junction bipolar transistors of f_T=55 GHz have been used and produced with a monolithic BiCMOS technology.

Keywords

heterojunction bipolar transistors; voltage-controlled oscillators; balanced Colpitts VCO; balanced Colpitts topology; cross-coupled differential pair; frequency 20 GHz; frequency 55 GHz; heterojunction bipolar transistor; monolithic BiCMOS technology; oscillation frequency; voltage controlled oscillator; BiCMOS integrated circuits; Bipolar transistors; Frequency; Low-frequency noise; Phase noise; Power generation; Topology; Tuning; Voltage; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Design and Technology of Integrated Systems in Nanoscale Era, 2008. DTIS 2008. 3rd International Conference on

Conference_Location

Tozeur

Print_ISBN

978-1-4244-1576-2

Electronic_ISBN

978-1-4244-1577-9

Type

conf

DOI

10.1109/DTIS.2008.4540269

Filename

4540269