A mixed-mode IF GFSK demodulator for Bluetooth

Author

Xin, Chunyu ; Xia, Bo ; Sheng, Wenjun ; Valero-Lopez, Ari Yakov ; Sanchez-Sinencio, Edgar

Author_Institution

Dept. of Electr. Eng., Texas A&M Univ., TX, USA

Volume

3

fYear

2002

fDate

2002

Abstract

The paper describes a novel mixed-mode GFSK demodulator with a frequency offset cancellation circuit as part of a low-IF Bluetooth receiver. The demodulator is fabricated in TSMC 0.35 μm standard CMOS process, consumes 3 mA from a 3 V power supply and occupies 0.7mm² of silicon area. For 10^-3 BER as specified in Bluetooth standard, only 16.2 dB input SNR is required. The co-channel interference rejection is about 11 dB. The demodulator is robust to process technology variation, and no calibration is required. It can track and cancel the time-varying local oscillator (LO) frequency offset between transmitter and receiver during the whole reception time.

Keywords

CMOS integrated circuits; cochannel interference; demodulators; frequency shift keying; interference suppression; mixed analogue-digital integrated circuits; wireless LAN; 0.35 micron; 3 V; 3 mA; Bluetooth; CMOS; IF GFSK demodulator; co-channel interference rejection; frequency offset cancellation circuit; mixed-mode IC; process technology variation; time-varying local oscillator frequency offset; Bit error rate; Bluetooth; CMOS process; Circuits; Demodulation; Frequency; Interchannel interference; Power supplies; Robustness; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2002. ISCAS 2002. IEEE International Symposium on

Print_ISBN

0-7803-7448-7

Type

conf

DOI

10.1109/ISCAS.2002.1010259

Filename

1010259