Title :
Total-dose and SEU results for the AD8001, a high-performance commercial op-amp fabricated in a dielectrically-isolated, complementary-bipolar process
Author :
DeLaus, Michael ; Combs, William
Author_Institution :
Analog Devices Semiconductor, Wilmington, MA, USA
Abstract :
Radiation test results are presented for the AD8001. This part is a state-of-the-art commercial op-amp fabricated on an advanced dielectrically-isolated process featuring lateral trench isolation and a bonded wafer substrate. Both cobalt-60 and SEU results are discussed. No total-dose failures were seen for exposures of >1Mrad(Si). No single-event induced latchup was observed up to the maximum LET (82.0 Mev-cm2/mg) used in this study.
Keywords :
bipolar analogue integrated circuits; integrated circuit testing; ion beam effects; isolation technology; neutron effects; operational amplifiers; proton effects; 1 Mrad; AD8001; SEU results; bonded wafer substrate; cobalt-60 results; dielectrically-isolated complementary-bipolar process; lateral trench isolation; maximum LET; op-amp; radiation test results; total-dose results; Circuit testing; Costs; Cranes; Dielectric devices; Dielectric substrates; Ionizing radiation; Operational amplifiers; Resistors; Single event upset; Space technology;
Conference_Titel :
Radiation Effects Data Workshop, 1994 IEEE
Print_ISBN :
0-7803-2022-0
DOI :
10.1109/REDW.1994.633042
